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Micron Memory Malaysia Sdn Bhd

High-Speed I/O & HBM Circuit Designer

Micron Memory Malaysia Sdn Bhd, Folsom, California, United States, 95630

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A leading semiconductor company in Folsom, California is seeking a seasoned MTS Circuit Design Engineer to architect high-speed clocking networks. This role requires over 10 years of analog/mixed-signal development experience and expertise in CMOS signal integrity. The successful candidate will work on advanced high bandwidth memory applications in a collaborative environment, pushing the boundaries of memory and storage solutions. #J-18808-Ljbffr