Postdoctoral Research Associate in TCAD Device Design of Power and RF Wide Bandg
University of Bristol - School of Physiology, Pharmacology and Neuroscience, Somerset, MA, United States
Applications are invited for the role of Postdoctoral Researcher at the Centre for Device Thermography and Reliability (CDTR), led by Professor Martin Kuball. We are looking for a candidate with prior expertise in TCAD device simulations. This role encompasses TCAD device design of wide and ultra‑wide bandgap semiconductor materials and devices, including GaN and Ga2O3, as well as thermal simulations using finite element methods. You will have the opportunity to develop and test models for unique device structures such as graded‑channel/multi‑channel GaN RF HEMTs and state‑of‑the‑art GaN and Ga2O3 power devices, and collaborate with our industrial partners spanning the semiconductor supply chain.
In addition, you will collaborate with other team researchers implementing device structures in our state‑of‑the‑art cleanroom, and with our semiconductor material growers who develop new material structures using our MOCVD Ga2O3 system and CVD diamond reactor. You will be supported by team members performing thermal and electric field analysis of devices to validate TCAD and thermal simulation results and by our electrical characterization team. If you have prior experimental expertise, you will have access to a wide range of electrical/thermal test facilities.
The CDTR leads the £11M UKRI Innovation and Knowledge Centre REWIRE, a strategic national centre aimed at transforming next‑generation wide and ultrawide bandgap semiconductor power electronics, and partners numerous European Space Agency (ESA) and DARPA programmes on high‑frequency, high‑power RF electronics. This position benefits from the Chair in Emerging Technologies awarded to Professor Kuball by the Royal Academy of Engineering in 2020. You will have the opportunity to make a major impact on future semiconductor device technology supported by an inclusive, multi‑national team.
What will you be doing?
You will conduct research to advance wide and ultra‑wide bandgap semiconductor materials device technologies and their understanding.
Develop device simulation TCAD models to complement experiments, support device design, and analyse device failure, breakdown and reliability.
Develop thermal material/device thermal models using finite element and other simulation tools, and support short‑term industrial contracts.
Qualifications
Postgraduate (PhD) experience in Physics, Materials Science or Engineering, or actively working towards one, or equivalent professional qualification/experience.
Ideally with a good publication record.
Extensive expertise required in TCAD device modelling.
Desirable experience in finite element thermal modelling, physics‑based modelling and electrical/thermal characterization of materials or devices.
A willingness to work together with, and co‑supervise, PhD students is necessary.
Additional information
Contract type: Open‑ended with fixed funding until 31/03/2028
Work pattern: Full‑time, 35 hours per week
Grade: I/Pathway 2
Salary: £ 39,906 – £ 44,746 per annum
School/Unit: School of Physics
Job title in the University of Bristol: Research Associate
The University of Bristol is an inclusive workplace where all colleagues can thrive and reach their full potential.
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In addition, you will collaborate with other team researchers implementing device structures in our state‑of‑the‑art cleanroom, and with our semiconductor material growers who develop new material structures using our MOCVD Ga2O3 system and CVD diamond reactor. You will be supported by team members performing thermal and electric field analysis of devices to validate TCAD and thermal simulation results and by our electrical characterization team. If you have prior experimental expertise, you will have access to a wide range of electrical/thermal test facilities.
The CDTR leads the £11M UKRI Innovation and Knowledge Centre REWIRE, a strategic national centre aimed at transforming next‑generation wide and ultrawide bandgap semiconductor power electronics, and partners numerous European Space Agency (ESA) and DARPA programmes on high‑frequency, high‑power RF electronics. This position benefits from the Chair in Emerging Technologies awarded to Professor Kuball by the Royal Academy of Engineering in 2020. You will have the opportunity to make a major impact on future semiconductor device technology supported by an inclusive, multi‑national team.
What will you be doing?
You will conduct research to advance wide and ultra‑wide bandgap semiconductor materials device technologies and their understanding.
Develop device simulation TCAD models to complement experiments, support device design, and analyse device failure, breakdown and reliability.
Develop thermal material/device thermal models using finite element and other simulation tools, and support short‑term industrial contracts.
Qualifications
Postgraduate (PhD) experience in Physics, Materials Science or Engineering, or actively working towards one, or equivalent professional qualification/experience.
Ideally with a good publication record.
Extensive expertise required in TCAD device modelling.
Desirable experience in finite element thermal modelling, physics‑based modelling and electrical/thermal characterization of materials or devices.
A willingness to work together with, and co‑supervise, PhD students is necessary.
Additional information
Contract type: Open‑ended with fixed funding until 31/03/2028
Work pattern: Full‑time, 35 hours per week
Grade: I/Pathway 2
Salary: £ 39,906 – £ 44,746 per annum
School/Unit: School of Physics
Job title in the University of Bristol: Research Associate
The University of Bristol is an inclusive workplace where all colleagues can thrive and reach their full potential.
#J-18808-Ljbffr