
Senior MV Shielded-Gate MOSFET Design Engineer — Hybrid
Renesas Electronics Corporation, Greenlawn, NY, United States
A leading semiconductor company is seeking a highly motivated engineer for their Medium Voltage Power Trench MOSFET Design Team. The role involves close collaboration with various teams to innovate and enhance product development. The ideal candidate should have a Ph.D. or M.S. in Electrical Engineering or Physics and up to 15 years of experience in power semiconductor devices. Proficiency in English and Japanese is also required. This role offers a hybrid work model with opportunities for impactful contributions.
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