RFIC/MMIC Designer
Falcomm, Atlanta, GA, United States
Are you passionate about designing cutting-edge RF integrated circuits for next-generation wireless systems? At Falcomm, we are transforming innovative semiconductor research into real-world solutions through high-performance, energy-efficient RF power amplifier technologies. Our mission is to enable faster, more efficient wireless communication by pushing the boundaries of RF semiconductor design.
Falcomm is seeking RFIC/MMIC Designers to develop high-frequency circuit blocks used in advanced RF front-end systems. This role will focus on the design and optimization of RF and mmWave circuits including mixers, low-noise amplifiers (LNAs), power amplifiers (PAs), switches, and voltage-controlled oscillators (VCOs). The position requires close collaboration with system architects, layout engineers, packaging teams, and test engineers to deliver high-performance semiconductor solutions from concept through silicon validation.
Responsibilities:
Design and develop RF and mmWave circuit blocks including mixers, LNAs, PAs, switches, and VCOs. Perform schematic design, simulation, and optimization to meet performance targets such as gain, noise figure, linearity, power, and bandwidth. Evaluate design trade-offs across performance, power consumption, and chip area. Collaborate with layout engineers to ensure RF performance and manufacturability. Support silicon bring-up, measurement, and debugging of fabricated devices. Document design methodologies, simulation results, and measurement data. Participate in design reviews and contribute to continuous improvement of RF design processes. Bachelor’s degree in Electrical Engineering, Computer Engineering, Computer Science, or a related discipline. 2+ years of experience in RF or mmWave circuit design. Strong understanding of RF circuit theory and semiconductor device behavior. Strong circuit design skills, and experience performing analysis and simulation of both linear and non-linear circuits for RF circuit blocks. Proficiency in simulation and design tools such as Cadence (Virtuoso)/Agilent ADS/Mentor tools /HFSS. And/or experience using simulation tools such as Keysight PathWave Designs Suite (ADS, SystemVue, GoldenGate, Momentum), and Spectre. Must be willing to work full-time, onsite, in Atlanta, GA.
Preferred Skills: Experience designing RFIC or MMIC circuits using SOI and GaN technologies. Understanding of RF front-end architectures used in wireless communication systems. Experience supporting silicon validation and RF measurement. Competitive Salary and Equity Package Comprehensive Health, Dental, and Vision Insurance 401(k) Retirement Plan Paid Time Off (PTO) and Sick Leave Disclosure: Falcomm is an Equal Opportunity Employer; employment with Falcomm is governed on the basis of merit, competence and qualifications and will not be influenced in any manner by race, color, religion, gender, national origin/ethnicity, veteran status, disability status, age, sexual orientation, gender identity, marital status, mental or physical disability or any other legally protected status. Applicants wishing to view a copy of Falcomm’s Affirmative Action Plan for veterans and individuals with disabilities, or applicants requiring reasonable accommodation to the application/interview process should notify Falcomm. To conform to U.S. Government export regulations, including the International Traffic in Arms Regulations (ITAR) you must be a U.S. citizen, lawful permanent resident of the U.S., protected individual as defined by 8 U.S.C. 1324b(a)(3), or eligible to obtain the required authorizations from the U.S. Department of State.
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Design and develop RF and mmWave circuit blocks including mixers, LNAs, PAs, switches, and VCOs. Perform schematic design, simulation, and optimization to meet performance targets such as gain, noise figure, linearity, power, and bandwidth. Evaluate design trade-offs across performance, power consumption, and chip area. Collaborate with layout engineers to ensure RF performance and manufacturability. Support silicon bring-up, measurement, and debugging of fabricated devices. Document design methodologies, simulation results, and measurement data. Participate in design reviews and contribute to continuous improvement of RF design processes. Bachelor’s degree in Electrical Engineering, Computer Engineering, Computer Science, or a related discipline. 2+ years of experience in RF or mmWave circuit design. Strong understanding of RF circuit theory and semiconductor device behavior. Strong circuit design skills, and experience performing analysis and simulation of both linear and non-linear circuits for RF circuit blocks. Proficiency in simulation and design tools such as Cadence (Virtuoso)/Agilent ADS/Mentor tools /HFSS. And/or experience using simulation tools such as Keysight PathWave Designs Suite (ADS, SystemVue, GoldenGate, Momentum), and Spectre. Must be willing to work full-time, onsite, in Atlanta, GA.
Preferred Skills: Experience designing RFIC or MMIC circuits using SOI and GaN technologies. Understanding of RF front-end architectures used in wireless communication systems. Experience supporting silicon validation and RF measurement. Competitive Salary and Equity Package Comprehensive Health, Dental, and Vision Insurance 401(k) Retirement Plan Paid Time Off (PTO) and Sick Leave Disclosure: Falcomm is an Equal Opportunity Employer; employment with Falcomm is governed on the basis of merit, competence and qualifications and will not be influenced in any manner by race, color, religion, gender, national origin/ethnicity, veteran status, disability status, age, sexual orientation, gender identity, marital status, mental or physical disability or any other legally protected status. Applicants wishing to view a copy of Falcomm’s Affirmative Action Plan for veterans and individuals with disabilities, or applicants requiring reasonable accommodation to the application/interview process should notify Falcomm. To conform to U.S. Government export regulations, including the International Traffic in Arms Regulations (ITAR) you must be a U.S. citizen, lawful permanent resident of the U.S., protected individual as defined by 8 U.S.C. 1324b(a)(3), or eligible to obtain the required authorizations from the U.S. Department of State.
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