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Sr. Design Engineer, DRAM

Micron Technology, Boise, ID, United States


Responsibilities

Define and implement DFT, testmode, and related design methodology requirements for current and future memory products

Design and evaluate new DFT circuit and architectural solutions to improve coverage, scalability, and robustness

Influence early design planning by shaping DFT architecture, testability strategies, and reusable design intent

Validate DFT solutions through modeling, simulation, and review of circuits, testmodes, and verification results

Collaborate across design, verification, product engineering, and manufacturing to meet coverage, cost, and quality goals

Minimum Qualifications

Bachelor’s degree in Electrical Engineering or related field, or equivalent practical experience

Experience with digital or mixed-signal circuit design and simulation

Working knowledge of Design-for-Test concepts or testmodes

Experience collaborating with cross-functional engineering teams

Preferred Qualifications

Master’s degree or PhD in Electrical Engineering or related field

Experience designing DFT circuits for complex SOC or memory products

Familiarity with DFT verification flows, automation, or industry-standard EDA tools

Experience applying or evaluating AI-assisted techniques in design or verification workflows

Equal Opportunity Employer: Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.

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